BAS116E6327HTSA1 Priser (USD) [2455275stk Lager]
- 1 pcs$0.01506
- 3,000 pcs$0.01472
- 6,000 pcs$0.01328
- 15,000 pcs$0.01154
- 30,000 pcs$0.01039
- 75,000 pcs$0.00923
- 150,000 pcs$0.00770
- Delnummer:
- BAS116E6327HTSA1
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- DIODE GEN PURP 80V 250MA SOT23-3. Diodes - General Purpose, Power, Switching Silicon Low Leakage Diode
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Tyristorer - SCR, Transistorer - Bipolar (BJT) - Arrays, Tyristorer - SCR-er - moduler, Transistorer - Bipolar (BJT) - Enkelt, forhåndsfor, Transistorer - FET, MOSFET - Arrays, Transistorer - IGBT-er - singel, Dioder - Zener - Arrays and Transistorer - FET, MOSFET - RF ...
- Konkurransefordel:
- We specialize in Infineon Technologies BAS116E6327HTSA1 electronic components. BAS116E6327HTSA1 can be shipped within 24 hours after order. If you have any demands for BAS116E6327HTSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BAS116E6327HTSA1 Produktegenskaper
Delnummer :
BAS116E6327HTSA1
Produsent :
Infineon Technologies
Beskrivelse :
DIODE GEN PURP 80V 250MA SOT23-3
Serie :
-
Delstatus :
Last Time Buy
Diodetype :
Standard
Spenning - DC Reverse (Vr) (Max) :
80V
Nåværende - Gjennomsnittlig rettet (Io) :
250mA (DC)
Spenning - Fremover (Vf) (Maks) @ Hvis :
1.25V @ 150mA
Hastighet :
Standard Recovery >500ns, > 200mA (Io)
Omvendt gjenopprettingstid (trr) :
1.5µs
Nåværende - Omvendt lekkasje @ Vr :
5nA @ 75V
Capacitance @ Vr, F :
2pF @ 0V, 1MHz
Monteringstype :
Surface Mount
Pakke / sak :
TO-236-3, SC-59, SOT-23-3
Leverandørenhetspakke :
SOT-23-3
Driftstemperatur - veikryss :
150°C (Max)
Siste nytt
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