[2595stk Lager]
- Delnummer:
- IPU80R2K8CEBKMA1
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET N-CH 800V 1.9A TO251-3.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - programmerbar enhet, Dioder - Zener - Arrays, Tyristorer - DIAC, SIDAC, Dioder - Variabel kapasitet (Varicaps, Varactors), Tyristorer - SCR-er - moduler, Transistorer - spesialformål, Dioder - likerettere - matriser and Transistorer - FET, MOSFET - En ...
- Konkurransefordel:
- We specialize in Infineon Technologies IPU80R2K8CEBKMA1 electronic components. IPU80R2K8CEBKMA1 can be shipped within 24 hours after order. If you have any demands for IPU80R2K8CEBKMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPU80R2K8CEBKMA1 Produktegenskaper
Delnummer :
IPU80R2K8CEBKMA1
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET N-CH 800V 1.9A TO251-3
Serie :
CoolMOS™
Delstatus :
Discontinued at Digi-Key
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
800V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
1.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
2.8 Ohm @ 1.1A, 10V
Vgs (th) (Max) @ Id :
3.9V @ 120µA
Gate Lading (Qg) (Max) @ Vgs :
12nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
290pF @ 100V
FET-funksjon :
-
Effektdissipasjon (maks) :
42W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
PG-TO251-3
Pakke / sak :
TO-251-3 Short Leads, IPak, TO-251AA
Siste nytt
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