BSC883N03LSGATMA1 Priser (USD) [279894stk Lager]
- 1 pcs$0.14166
- 5,000 pcs$0.14096
- Delnummer:
- BSC883N03LSGATMA1
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET N-CH 34V 17A TDSON-8.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - Bipolar (BJT) - Arrays, pre-partisk, Transistorer - Bipolar (BJT) - Enkelt, forhåndsfor, Power Driver-moduler, Tyristorer - DIAC, SIDAC, Transistorer - Bipolar (BJT) - Arrays, Tyristorer - SCR-er - moduler, Transistorer - IGBT-er - singel and Dioder - likerettere - matriser ...
- Konkurransefordel:
- We specialize in Infineon Technologies BSC883N03LSGATMA1 electronic components. BSC883N03LSGATMA1 can be shipped within 24 hours after order. If you have any demands for BSC883N03LSGATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSC883N03LSGATMA1 Produktegenskaper
Delnummer :
BSC883N03LSGATMA1
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET N-CH 34V 17A TDSON-8
Serie :
OptiMOS™
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
34V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
17A (Ta), 98A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, vgs :
3.8 mOhm @ 30A, 10V
Vgs (th) (Max) @ Id :
2.2V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
34nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
2800pF @ 15V
FET-funksjon :
-
Effektdissipasjon (maks) :
2.5W (Ta), 57W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
PG-TDSON-8
Pakke / sak :
8-PowerTDFN
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