SIZF920DT-T1-GE3 Priser (USD) [102903stk Lager]
- 1 pcs$0.37998
- Delnummer:
- SIZF920DT-T1-GE3
- Produsent:
- Vishay Siliconix
- Detaljert beskrivelse:
- MOSFET DL N-CH 30V POWERPAIR 6X5.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - Bipolar (BJT) - Singel, Transistorer - JFET-er, Power Driver-moduler, Transistorer - FET, MOSFET - En, Tyristorer - SCR, Tyristorer - SCR-er - moduler, Transistorer - Bipolar (BJT) - Enkelt, forhåndsfor and Transistorer - Bipolar (BJT) - Arrays ...
- Konkurransefordel:
- We specialize in Vishay Siliconix SIZF920DT-T1-GE3 electronic components. SIZF920DT-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIZF920DT-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIZF920DT-T1-GE3 Produktegenskaper
Delnummer :
SIZF920DT-T1-GE3
Produsent :
Vishay Siliconix
Beskrivelse :
MOSFET DL N-CH 30V POWERPAIR 6X5
Serie :
TrenchFET® Gen IV
Delstatus :
Active
FET Type :
2 N-Channel (Dual), Schottky
FET-funksjon :
Standard
Drenering til kildespenning (Vdss) :
30V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
28A (Ta), 76A (Tc), 49A (Ta), 197A (Tc)
Rds On (Max) @ Id, vgs :
3.07 mOhm @ 10A, 10V, 1.05 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id :
2.4V @ 250µA, 2.2V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
29nC @ 10V, 125nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
1300pF @ 15V, 5230pF @ 15V
Kraft - Maks :
3.9W (Ta), 28W (Tc), 4.5W (Ta), 74W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Pakke / sak :
8-PowerWDFN
Leverandørenhetspakke :
8-PowerPair® (6x5)
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