Vishay Semiconductor Diodes Division - ES2G-M3/5BT

KEY Part #: K6458051

ES2G-M3/5BT Priser (USD) [831152stk Lager]

  • 1 pcs$0.04696
  • 9,600 pcs$0.04673

Delnummer:
ES2G-M3/5BT
Produsent:
Vishay Semiconductor Diodes Division
Detaljert beskrivelse:
DIODE GEN PURP 400V 2A DO214AA. Rectifiers 2A,400V,35NS,UF Rect,SMD
Manufacturer's standard lead time:
På lager
Holdbarhet:
Ett år
Brikke fra:
Hong Kong
RoHS:
Betalingsmetode:
Forsendelsesmåte:
Familiekategorier:
KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - IGBT-er - Arrays, Transistorer - Bipolar (BJT) - RF, Transistorer - Bipolar (BJT) - Arrays, Transistorer - FET, MOSFET - En, Tyristorer - SCR-er - moduler, Dioder - RF, Transistorer - programmerbar enhet and Transistorer - Bipolar (BJT) - Arrays, pre-partisk ...
Konkurransefordel:
We specialize in Vishay Semiconductor Diodes Division ES2G-M3/5BT electronic components. ES2G-M3/5BT can be shipped within 24 hours after order. If you have any demands for ES2G-M3/5BT, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

ES2G-M3/5BT Produktegenskaper

Delnummer : ES2G-M3/5BT
Produsent : Vishay Semiconductor Diodes Division
Beskrivelse : DIODE GEN PURP 400V 2A DO214AA
Serie : -
Delstatus : Active
Diodetype : Standard
Spenning - DC Reverse (Vr) (Max) : 400V
Nåværende - Gjennomsnittlig rettet (Io) : 2A
Spenning - Fremover (Vf) (Maks) @ Hvis : 1.1V @ 2A
Hastighet : Fast Recovery =< 500ns, > 200mA (Io)
Omvendt gjenopprettingstid (trr) : 50ns
Nåværende - Omvendt lekkasje @ Vr : 10µA @ 400V
Capacitance @ Vr, F : 15pF @ 4V, 1MHz
Monteringstype : Surface Mount
Pakke / sak : DO-214AA, SMB
Leverandørenhetspakke : DO-214AA (SMB)
Driftstemperatur - veikryss : -55°C ~ 150°C

Du kan også være interessert i
  • BYM07-150HE3_A/H

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 150V 500MA DO213. Rectifiers 0.5A,150V,50NS GL34 AEC-Q101 Qualified

  • BYM07-400-E3/83

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 400V 500MA DO213. Rectifiers 400 Volt 0.5A 50ns Glass Passivated

  • EGL34G-E3/83

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 400V 500MA DO213. Rectifiers 0.5Amp 400 Volt 50ns

  • GL34B-E3/83

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 100V 500MA DO213. Rectifiers 100 Volt 0.5 Amp 10 Amp IFSM

  • GL34G-E3/83

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 400V 500MA DO213. Rectifiers 400 Volt 0.5 Amp 10 Amp IFSM

  • GL34D-E3/83

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 200V 500MA DO213. Rectifiers 200 Volt 0.5 Amp 10 Amp IFSM