[2458stk Lager]
- Delnummer:
- TK12V60W,LVQ
- Produsent:
- Toshiba Semiconductor and Storage
- Detaljert beskrivelse:
- MOSFET N CH 600V 11.5A 5DFN.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - IGBT-er - moduler, Transistorer - Bipolar (BJT) - Arrays, Transistorer - JFET-er, Transistorer - Bipolar (BJT) - RF, Tyristorer - SCR-er - moduler, Dioder - Zener - Arrays, Transistorer - FET, MOSFET - Arrays and Dioder - RF ...
- Konkurransefordel:
- We specialize in Toshiba Semiconductor and Storage TK12V60W,LVQ electronic components. TK12V60W,LVQ can be shipped within 24 hours after order. If you have any demands for TK12V60W,LVQ, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK12V60W,LVQ Produktegenskaper
Delnummer :
TK12V60W,LVQ
Produsent :
Toshiba Semiconductor and Storage
Beskrivelse :
MOSFET N CH 600V 11.5A 5DFN
Serie :
DTMOSIV
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
600V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
11.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
300 mOhm @ 5.8A, 10V
Vgs (th) (Max) @ Id :
3.7V @ 600µA
Gate Lading (Qg) (Max) @ Vgs :
25nC @ 10V
Vgs (maks) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
890pF @ 300V
FET-funksjon :
Super Junction
Effektdissipasjon (maks) :
104W (Tc)
Driftstemperatur :
150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
4-DFN-EP (8x8)
Pakke / sak :
4-VSFN Exposed Pad
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