IXFA130N10T2 Priser (USD) [30787stk Lager]
- 1 pcs$1.34832
- 150 pcs$1.34161
- Delnummer:
- IXFA130N10T2
- Produsent:
- IXYS
- Detaljert beskrivelse:
- MOSFET N-CH 100V 130A TO-263AA.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - Bipolar (BJT) - Arrays, pre-partisk, Power Driver-moduler, Dioder - Bridge likerettere, Dioder - RF, Dioder - Zener - Arrays, Transistorer - Bipolar (BJT) - Enkelt, forhåndsfor, Transistorer - IGBT-er - Arrays and Transistorer - Bipolar (BJT) - RF ...
- Konkurransefordel:
- We specialize in IXYS IXFA130N10T2 electronic components. IXFA130N10T2 can be shipped within 24 hours after order. If you have any demands for IXFA130N10T2, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFA130N10T2 Produktegenskaper
Delnummer :
IXFA130N10T2
Produsent :
IXYS
Beskrivelse :
MOSFET N-CH 100V 130A TO-263AA
Serie :
GigaMOS™, HiPerFET™, TrenchT2™
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
100V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
130A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
9.1 mOhm @ 65A, 10V
Vgs (th) (Max) @ Id :
4.5V @ 1mA
Gate Lading (Qg) (Max) @ Vgs :
130nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
6600pF @ 25V
FET-funksjon :
-
Effektdissipasjon (maks) :
360W (Tc)
Driftstemperatur :
-55°C ~ 175°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
TO-263 (IXFA)
Pakke / sak :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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