NTHS4101PT1G Priser (USD) [259672stk Lager]
- 1 pcs$0.14315
- 3,000 pcs$0.14244
- Delnummer:
- NTHS4101PT1G
- Produsent:
- ON Semiconductor
- Detaljert beskrivelse:
- MOSFET P-CH 20V 4.8A CHIPFET.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Tyristorer - SCR, Transistorer - Bipolar (BJT) - Arrays, pre-partisk, Transistorer - Bipolar (BJT) - Arrays, Transistorer - programmerbar enhet, Dioder - Zener - Arrays, Transistorer - Bipolar (BJT) - Enkelt, forhåndsfor, Transistorer - FET, MOSFET - Arrays and Transistorer - Bipolar (BJT) - Singel ...
- Konkurransefordel:
- We specialize in ON Semiconductor NTHS4101PT1G electronic components. NTHS4101PT1G can be shipped within 24 hours after order. If you have any demands for NTHS4101PT1G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
NTHS4101PT1G Produktegenskaper
Delnummer :
NTHS4101PT1G
Produsent :
ON Semiconductor
Beskrivelse :
MOSFET P-CH 20V 4.8A CHIPFET
Serie :
-
Delstatus :
Active
FET Type :
P-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
20V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
4.8A (Tj)
Drive Voltage (Max Rds On, Min Rds On) :
1.8V, 4.5V
Rds On (Max) @ Id, vgs :
34 mOhm @ 4.8A, 4.5V
Vgs (th) (Max) @ Id :
1.5V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
35nC @ 4.5V
Vgs (maks) :
±8V
Input Capacitance (Ciss) (Max) @ Vds :
2100pF @ 16V
FET-funksjon :
-
Effektdissipasjon (maks) :
1.3W (Ta)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
ChipFET™
Pakke / sak :
8-SMD, Flat Lead
Siste nytt
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