IXTQ130N10T Priser (USD) [30967stk Lager]
- 1 pcs$1.46753
- 10 pcs$1.30888
- 100 pcs$1.01824
- 500 pcs$0.82453
- 1,000 pcs$0.69538
- Delnummer:
- IXTQ130N10T
- Produsent:
- IXYS
- Detaljert beskrivelse:
- MOSFET N-CH 100V 130A TO-3P.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Tyristorer - SCR-er - moduler, Transistorer - IGBT-er - singel, Tyristorer - DIAC, SIDAC, Dioder - Zener - Singel, Transistorer - Bipolar (BJT) - Singel, Transistorer - Bipolar (BJT) - Arrays, pre-partisk, Dioder - Bridge likerettere and Dioder - RF ...
- Konkurransefordel:
- We specialize in IXYS IXTQ130N10T electronic components. IXTQ130N10T can be shipped within 24 hours after order. If you have any demands for IXTQ130N10T, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTQ130N10T Produktegenskaper
Delnummer :
IXTQ130N10T
Produsent :
IXYS
Beskrivelse :
MOSFET N-CH 100V 130A TO-3P
Serie :
TrenchMV™
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
100V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
130A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
9.1 mOhm @ 25A, 10V
Vgs (th) (Max) @ Id :
4.5V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
104nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
5080pF @ 25V
FET-funksjon :
-
Effektdissipasjon (maks) :
360W (Tc)
Driftstemperatur :
-55°C ~ 175°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
TO-3P
Pakke / sak :
TO-3P-3, SC-65-3
Siste nytt
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