Delnummer :
RN1110MFV,L3F
Produsent :
Toshiba Semiconductor and Storage
Beskrivelse :
TRANS PREBIAS NPN 0.15W VESM
Transistortype :
NPN - Pre-Biased
Nåværende - Samler (Ic) (Maks) :
100mA
Spenning - Samlebrenningens nedbrytning (maks) :
50V
Motstand - base (R1) :
4.7 kOhms
Motstand - Emitter Base (R2) :
-
DC Current Gain (hFE) (Min) @ Ic, Vce :
120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic :
300mV @ 500µA, 5mA
Nåværende - Collector Cutoff (Max) :
100nA (ICBO)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
VESM