IXFA3N120 Priser (USD) [17085stk Lager]
- 1 pcs$3.23474
- 10 pcs$2.91215
- 100 pcs$2.39454
- 500 pcs$2.00623
- 1,000 pcs$1.74735
- Delnummer:
- IXFA3N120
- Produsent:
- IXYS
- Detaljert beskrivelse:
- MOSFET N-CH 1200V 3A TO-263.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Tyristorer - SCR-er - moduler, Transistorer - Bipolar (BJT) - Arrays, pre-partisk, Power Driver-moduler, Dioder - Bridge likerettere, Dioder - Variabel kapasitet (Varicaps, Varactors), Dioder - Zener - Arrays, Transistorer - IGBT-er - singel and Transistorer - FET, MOSFET - Arrays ...
- Konkurransefordel:
- We specialize in IXYS IXFA3N120 electronic components. IXFA3N120 can be shipped within 24 hours after order. If you have any demands for IXFA3N120, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFA3N120 Produktegenskaper
Delnummer :
IXFA3N120
Produsent :
IXYS
Beskrivelse :
MOSFET N-CH 1200V 3A TO-263
Serie :
HiPerFET™
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
1200V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
4.5 Ohm @ 1.5A, 10V
Vgs (th) (Max) @ Id :
5V @ 1.5mA
Gate Lading (Qg) (Max) @ Vgs :
39nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1050pF @ 25V
FET-funksjon :
-
Effektdissipasjon (maks) :
200W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
TO-263 (IXFA)
Pakke / sak :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Siste nytt
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