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Hvis plasseringen din ikke er oppført, kan du velge ett av følgende:

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Samsung Semiconductor - M378A2K43DB1-CTD

KEY Part #: K7359798

[26082stk Lager]

    Delnummer:
    M378A2K43DB1-CTD
    Produsent:
    Samsung Semiconductor
    Detaljert beskrivelse:
    DDR4 UDIMM 16 GB 2R x 8 2666 Mbps 1.2 V 288 (1G x 8) x 16 Mass Production.
    Manufacturer's standard lead time:
    På lager
    Holdbarhet:
    Ett år
    Brikke fra:
    Hong Kong
    RoHS:
    Betalingsmetode:
    Forsendelsesmåte:
    Familiekategorier:
    KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: LPDDR3, MODULE, SLC Nand, GDDR6, LPDDR4, DDR3, HBM Aquabolt and LPDDR5 ...
    Konkurransefordel:
    We specialize in Samsung Semiconductor M378A2K43DB1-CTD electronic components. M378A2K43DB1-CTD can be shipped within 24 hours after order. If you have any demands for M378A2K43DB1-CTD, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    M378A2K43DB1-CTD Produktegenskaper

    Delnummer : M378A2K43DB1-CTD
    Produsent : Samsung Semiconductor
    Beskrivelse : DDR4 UDIMM 16 GB 2R x 8 2666 Mbps 1.2 V 288 (1G x 8) x 16 Mass Production
    Serie : DDR3
    DDR : DDR4
    DIMM-type : UDIMM
    tetthet : 16 GB
    Rang x Org. : 2R x 8
    Hastighet : 2666 Mbps
    Spenning : 1.2 V
    Antall Pin : 288
    Component Sammensetning : (1G x 8) x 16
    Product Status : Mass Production

    Siste nytt

    Samsung Honored for Outstanding Design and Engineering with 36 CES 2018 Innovation Awards
    Speed for the next generation of mobile devices
    Samsung Now Producing Four Gigabit LPDDR3 Mobile DRAM, Using 20nm-class Process Technology
    Samsung Z-SSD SZ985
    Samsung Launches Industry’s First 12Gb LPDDR4 DRAM
    Samsung’s Newest ISOCELL Image Sensor Enables Mobile Devices to ‘Slow Down’ Time
    An Exclusive Look Inside Samsung’s Memory Exhibit at MWC
    Samsung Now Mass Producing Industry’s Most Advanced 4Gb DDR3, Using 20 Nanometer Process Technology
    Unlocking the Power of Cloud Computing
    The future of NAND technology
    The Ultra-Low Latency SSD, Z-SSD
    How Will 5G Impact on Memory?
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