IRF5802TRPBF Priser (USD) [420018stk Lager]
- 1 pcs$0.08806
- 3,000 pcs$0.06959
- Delnummer:
- IRF5802TRPBF
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET N-CH 150V 0.9A 6-TSOP.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - IGBT-er - moduler, Transistorer - Bipolar (BJT) - Arrays, Transistorer - FET, MOSFET - En, Tyristorer - SCR, Transistorer - Bipolar (BJT) - Arrays, pre-partisk, Transistorer - IGBT-er - singel, Power Driver-moduler and Transistorer - programmerbar enhet ...
- Konkurransefordel:
- We specialize in Infineon Technologies IRF5802TRPBF electronic components. IRF5802TRPBF can be shipped within 24 hours after order. If you have any demands for IRF5802TRPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF5802TRPBF Produktegenskaper
Delnummer :
IRF5802TRPBF
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET N-CH 150V 0.9A 6-TSOP
Serie :
HEXFET®
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
150V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
900mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
1.2 Ohm @ 540mA, 10V
Vgs (th) (Max) @ Id :
5.5V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
6.8nC @ 10V
Vgs (maks) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
88pF @ 25V
FET-funksjon :
-
Effektdissipasjon (maks) :
2W (Ta)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
Micro6™(TSOP-6)
Pakke / sak :
SOT-23-6 Thin, TSOT-23-6
Siste nytt
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