IRFH8311TRPBF Priser (USD) [177240stk Lager]
- 1 pcs$0.20869
- 4,000 pcs$0.17833
- Delnummer:
- IRFH8311TRPBF
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET N CH 30V 32A PQFN5X6.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - IGBT-er - moduler, Dioder - Bridge likerettere, Tyristorer - SCR, Transistorer - IGBT-er - singel, Dioder - Zener - Arrays, Dioder - likerettere - matriser, Dioder - Zener - Singel and Transistorer - Bipolar (BJT) - Enkelt, forhåndsfor ...
- Konkurransefordel:
- We specialize in Infineon Technologies IRFH8311TRPBF electronic components. IRFH8311TRPBF can be shipped within 24 hours after order. If you have any demands for IRFH8311TRPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFH8311TRPBF Produktegenskaper
Delnummer :
IRFH8311TRPBF
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET N CH 30V 32A PQFN5X6
Serie :
HEXFET®
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
30V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
32A (Ta), 169A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, vgs :
2.1 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id :
2.35V @ 100µA
Gate Lading (Qg) (Max) @ Vgs :
66nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
4960pF @ 10V
FET-funksjon :
-
Effektdissipasjon (maks) :
3.6W (Ta), 96W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
PQFN (5x6)
Pakke / sak :
8-TQFN Exposed Pad
Siste nytt
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