FDB060AN08A0 Priser (USD) [47280stk Lager]
- 1 pcs$0.82700
- 800 pcs$0.79334
- Delnummer:
- FDB060AN08A0
- Produsent:
- ON Semiconductor
- Detaljert beskrivelse:
- MOSFET N-CH 75V 80A TO-263AB.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - JFET-er, Transistorer - Bipolar (BJT) - Arrays, Dioder - Zener - Arrays, Transistorer - Bipolar (BJT) - RF, Tyristorer - SCR, Dioder - Bridge likerettere, Transistorer - FET, MOSFET - En and Power Driver-moduler ...
- Konkurransefordel:
- We specialize in ON Semiconductor FDB060AN08A0 electronic components. FDB060AN08A0 can be shipped within 24 hours after order. If you have any demands for FDB060AN08A0, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FDB060AN08A0 Produktegenskaper
Delnummer :
FDB060AN08A0
Produsent :
ON Semiconductor
Beskrivelse :
MOSFET N-CH 75V 80A TO-263AB
Serie :
PowerTrench®
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
75V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
16A (Ta), 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
6V, 10V
Rds On (Max) @ Id, vgs :
6 mOhm @ 80A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
95nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
5150pF @ 25V
FET-funksjon :
-
Effektdissipasjon (maks) :
255W (Tc)
Driftstemperatur :
-55°C ~ 175°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
D²PAK
Pakke / sak :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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