SIHB12N50E-GE3 Priser (USD) [35558stk Lager]
- 1 pcs$1.09960
- 10 pcs$0.99173
- 100 pcs$0.79681
- 500 pcs$0.61973
- 1,000 pcs$0.51349
- Delnummer:
- SIHB12N50E-GE3
- Produsent:
- Vishay Siliconix
- Detaljert beskrivelse:
- MOSFET N-CH 500V 10.5A TO-263.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - Bipolar (BJT) - Arrays, pre-partisk, Transistorer - IGBT-er - singel, Tyristorer - SCR, Transistorer - IGBT-er - Arrays, Transistorer - Bipolar (BJT) - Singel, Transistorer - Bipolar (BJT) - RF, Tyristorer - TRIAC and Power Driver-moduler ...
- Konkurransefordel:
- We specialize in Vishay Siliconix SIHB12N50E-GE3 electronic components. SIHB12N50E-GE3 can be shipped within 24 hours after order. If you have any demands for SIHB12N50E-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIHB12N50E-GE3 Produktegenskaper
Delnummer :
SIHB12N50E-GE3
Produsent :
Vishay Siliconix
Beskrivelse :
MOSFET N-CH 500V 10.5A TO-263
Serie :
-
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
500V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
10.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
380 mOhm @ 6A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
50nC @ 10V
Vgs (maks) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
886pF @ 100V
FET-funksjon :
-
Effektdissipasjon (maks) :
114W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
D²PAK (TO-263)
Pakke / sak :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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