Beskrivelse :
GAN TRANS 2N-CH 30V BUMPED DIE
Delstatus :
Discontinued at Digi-Key
FET Type :
2 N-Channel (Half Bridge)
FET-funksjon :
GaNFET (Gallium Nitride)
Drenering til kildespenning (Vdss) :
30V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
10A (Ta), 40A (Ta)
Rds On (Max) @ Id, vgs :
8.2 mOhm @ 25A, 5V, 2.1 mOhm @ 25A, 5V
Vgs (th) (Max) @ Id :
2.5V @ 4mA, 2.5V @ 16mA
Gate Lading (Qg) (Max) @ Vgs :
4.9nC @ 15V, 19nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds :
475pF @ 15V, 1960pF @ 15V
Driftstemperatur :
-40°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
Die