HN4B01JE(TE85L,F) Priser (USD) [1309823stk Lager]
- 1 pcs$0.02824
- Delnummer:
- HN4B01JE(TE85L,F)
- Produsent:
- Toshiba Semiconductor and Storage
- Detaljert beskrivelse:
- TRANS NPN/PNP 50V 0.15A ESV PLN.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - Variabel kapasitet (Varicaps, Varactors), Dioder - likerettere - singel, Dioder - likerettere - matriser, Transistorer - Bipolar (BJT) - Arrays, pre-partisk, Tyristorer - TRIAC, Power Driver-moduler, Transistorer - FET, MOSFET - Arrays and Transistorer - programmerbar enhet ...
- Konkurransefordel:
- We specialize in Toshiba Semiconductor and Storage HN4B01JE(TE85L,F) electronic components. HN4B01JE(TE85L,F) can be shipped within 24 hours after order. If you have any demands for HN4B01JE(TE85L,F), Please submit a Request for Quotation here or send us an email: rfq@key-components.com
HN4B01JE(TE85L,F) Produktegenskaper
Delnummer :
HN4B01JE(TE85L,F)
Produsent :
Toshiba Semiconductor and Storage
Beskrivelse :
TRANS NPN/PNP 50V 0.15A ESV PLN
Serie :
-
Delstatus :
Active
Transistortype :
NPN, PNP (Emitter Coupled)
Nåværende - Samler (Ic) (Maks) :
150mA
Spenning - Samlebrenningens nedbrytning (maks) :
50V
Vce Saturation (Max) @ Ib, Ic :
250mV @ 10mA, 100mA
Nåværende - Collector Cutoff (Max) :
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce :
120 @ 10MA, 100MA
Kraft - Maks :
100mW
Frekvens - overgang :
80MHz
Driftstemperatur :
150°C (TJ)
Monteringstype :
Surface Mount
Pakke / sak :
SOT-553
Leverandørenhetspakke :
ESV
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