TK33S10N1Z,LQ Priser (USD) [146815stk Lager]
- 1 pcs$0.27851
- 2,000 pcs$0.27713
- Delnummer:
- TK33S10N1Z,LQ
- Produsent:
- Toshiba Semiconductor and Storage
- Detaljert beskrivelse:
- MOSFET N-CH 100V 33A DPAK.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - Variabel kapasitet (Varicaps, Varactors), Transistorer - FET, MOSFET - Arrays, Transistorer - IGBT-er - Arrays, Dioder - Bridge likerettere, Transistorer - IGBT-er - singel, Dioder - likerettere - singel, Dioder - likerettere - matriser and Transistorer - programmerbar enhet ...
- Konkurransefordel:
- We specialize in Toshiba Semiconductor and Storage TK33S10N1Z,LQ electronic components. TK33S10N1Z,LQ can be shipped within 24 hours after order. If you have any demands for TK33S10N1Z,LQ, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK33S10N1Z,LQ Produktegenskaper
Delnummer :
TK33S10N1Z,LQ
Produsent :
Toshiba Semiconductor and Storage
Beskrivelse :
MOSFET N-CH 100V 33A DPAK
Serie :
U-MOSVIII-H
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
100V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
33A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
9.7 mOhm @ 16.5A, 10V
Vgs (th) (Max) @ Id :
4V @ 500µA
Gate Lading (Qg) (Max) @ Vgs :
28nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
2050pF @ 10V
FET-funksjon :
-
Effektdissipasjon (maks) :
125W (Tc)
Driftstemperatur :
175°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
DPAK+
Pakke / sak :
TO-252-3, DPak (2 Leads + Tab), SC-63
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