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Hvis plasseringen din ikke er oppført, kan du velge ett av følgende:

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Samsung Semiconductor - KLUDG4U1EA-B0C1

KEY Part #: K7360018

[16279stk Lager]

    Delnummer:
    KLUDG4U1EA-B0C1
    Produsent:
    Samsung Semiconductor
    Detaljert beskrivelse:
    UFS 2.1 128 GB 1.8 / 3.3 V G3 2Lane 11.5 x 13 x 1.0 mm -25 ~ 85 °C Mass Production.
    Manufacturer's standard lead time:
    På lager
    Holdbarhet:
    Ett år
    Brikke fra:
    Hong Kong
    RoHS:
    Betalingsmetode:
    Forsendelsesmåte:
    Familiekategorier:
    KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: DDR4, LPDDR3, HBM Aquabolt, SLC Nand, GDDR6, GDDR5, DDR3 and LPDDR4 ...
    Konkurransefordel:
    We specialize in Samsung Semiconductor KLUDG4U1EA-B0C1 electronic components. KLUDG4U1EA-B0C1 can be shipped within 24 hours after order. If you have any demands for KLUDG4U1EA-B0C1, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    KLUDG4U1EA-B0C1 Produktegenskaper

    Delnummer : KLUDG4U1EA-B0C1
    Produsent : Samsung Semiconductor
    Beskrivelse : UFS 2.1 128 GB 1.8 / 3.3 V G3 2Lane 11.5 x 13 x 1.0 mm -25 ~ 85 °C Mass Production
    Serie : DDR3
    Versjon : UFS 2.1
    tetthet : 128 GB
    Spenning : 1.8 / 3.3 V
    Interface : G3 2Lane
    pakkestørrelse : 11.5 x 13 x 1.0 mm
    Temp. : -25 ~ 85 °C
    Product Status : Mass Production

    Siste nytt

    SSDs, DRAM and gaming: Unlocking a new level of performance
    NF1 SSD, Reach New Heights with Hyper-Scalable Datacenters
    Speed for the next generation of mobile devices
    Mission Peak Reference Server System for NGSFF SSD
    The future of NAND technology
    Samsung Memory Solutions for Automotive
    Samsung Rolls Out Industry’s First 8GB LPDDR4 DRAM Package
    Samsung Showcases Its Latest Silicon Technologies for the Next Wave of Innovation at Annual Tech Day
    Automotive Driven by Small Packages Under the Hood
    Inside the building blocks of the 5G future
    Samsung Announces Production of Industry’s First 2GB LPDDR3 Mobile Memory, Using 30nm-class Technology
    5G and Memory - from Connected Thinking to Connected Living
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