Vishay Semiconductor Diodes Division - VS-GB100TH120N

KEY Part #: K6533211

VS-GB100TH120N Priser (USD) [261stk Lager]

  • 1 pcs$177.68022
  • 12 pcs$163.71967

Delnummer:
VS-GB100TH120N
Produsent:
Vishay Semiconductor Diodes Division
Detaljert beskrivelse:
IGBT 1200V 200A 833W INT-A-PAK.
Manufacturer's standard lead time:
På lager
Holdbarhet:
Ett år
Brikke fra:
Hong Kong
RoHS:
Betalingsmetode:
Forsendelsesmåte:
Familiekategorier:
KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - Bipolar (BJT) - Arrays, Dioder - Bridge likerettere, Tyristorer - SCR, Transistorer - FET, MOSFET - En, Tyristorer - DIAC, SIDAC, Dioder - likerettere - matriser, Transistorer - IGBT-er - Arrays and Transistorer - Bipolar (BJT) - RF ...
Konkurransefordel:
We specialize in Vishay Semiconductor Diodes Division VS-GB100TH120N electronic components. VS-GB100TH120N can be shipped within 24 hours after order. If you have any demands for VS-GB100TH120N, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VS-GB100TH120N Produktegenskaper

Delnummer : VS-GB100TH120N
Produsent : Vishay Semiconductor Diodes Division
Beskrivelse : IGBT 1200V 200A 833W INT-A-PAK
Serie : -
Delstatus : Active
IGBT-type : -
konfigurasjon : Half Bridge
Spenning - Samlebrenningens nedbrytning (maks) : 1200V
Nåværende - Samler (Ic) (Maks) : 200A
Kraft - Maks : 833W
Vce (på) (Max) @ Vge, Ic : 2.35V @ 15V, 100A
Nåværende - Collector Cutoff (Max) : 5mA
Input Capacitance (Cies) @ Vce : 8.58nF @ 25V
Input : Standard
NTC Thermistor : No
Driftstemperatur : 150°C (TJ)
Monteringstype : Chassis Mount
Pakke / sak : Double INT-A-PAK (3 + 4)
Leverandørenhetspakke : Double INT-A-PAK

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