EGL34BHE3_A/I Priser (USD) [732237stk Lager]
- 1 pcs$0.05051
- Delnummer:
- EGL34BHE3_A/I
- Produsent:
- Vishay Semiconductor Diodes Division
- Detaljert beskrivelse:
- DIODE GEN PURP 100V 500MA DO213. Rectifiers 0.5A,100V,50NS AEC-Q101 Qualified
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Tyristorer - SCR, Transistorer - Bipolar (BJT) - Arrays, Transistorer - FET, MOSFET - En, Transistorer - IGBT-er - moduler, Dioder - likerettere - matriser, Transistorer - spesialformål, Tyristorer - TRIAC and Transistorer - Bipolar (BJT) - Enkelt, forhåndsfor ...
- Konkurransefordel:
- We specialize in Vishay Semiconductor Diodes Division EGL34BHE3_A/I electronic components. EGL34BHE3_A/I can be shipped within 24 hours after order. If you have any demands for EGL34BHE3_A/I, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
EGL34BHE3_A/I Produktegenskaper
Delnummer :
EGL34BHE3_A/I
Produsent :
Vishay Semiconductor Diodes Division
Beskrivelse :
DIODE GEN PURP 100V 500MA DO213
Serie :
Automotive, AEC-Q101, Superectifier®
Delstatus :
Active
Diodetype :
Standard
Spenning - DC Reverse (Vr) (Max) :
100V
Nåværende - Gjennomsnittlig rettet (Io) :
500mA
Spenning - Fremover (Vf) (Maks) @ Hvis :
1.25V @ 500mA
Hastighet :
Fast Recovery =< 500ns, > 200mA (Io)
Omvendt gjenopprettingstid (trr) :
50ns
Nåværende - Omvendt lekkasje @ Vr :
5µA @ 100V
Capacitance @ Vr, F :
7pF @ 4V, 1MHz
Monteringstype :
Surface Mount
Pakke / sak :
DO-213AA (Glass)
Leverandørenhetspakke :
DO-213AA (GL34)
Driftstemperatur - veikryss :
-65°C ~ 175°C
Siste nytt
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