SI2308BDS-T1-GE3 Priser (USD) [514079stk Lager]
- 1 pcs$0.07195
- 3,000 pcs$0.06474
- Delnummer:
- SI2308BDS-T1-GE3
- Produsent:
- Vishay Siliconix
- Detaljert beskrivelse:
- MOSFET N-CH 60V 2.3A SOT23-3.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - FET, MOSFET - En, Transistorer - IGBT-er - singel, Transistorer - Bipolar (BJT) - Arrays, Dioder - likerettere - singel, Dioder - Bridge likerettere, Power Driver-moduler, Transistorer - IGBT-er - moduler and Transistorer - IGBT-er - Arrays ...
- Konkurransefordel:
- We specialize in Vishay Siliconix SI2308BDS-T1-GE3 electronic components. SI2308BDS-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI2308BDS-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI2308BDS-T1-GE3 Produktegenskaper
Delnummer :
SI2308BDS-T1-GE3
Produsent :
Vishay Siliconix
Beskrivelse :
MOSFET N-CH 60V 2.3A SOT23-3
Serie :
TrenchFET®
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
60V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
2.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, vgs :
156 mOhm @ 1.9A, 10V
Vgs (th) (Max) @ Id :
3V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
6.8nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
190pF @ 30V
FET-funksjon :
-
Effektdissipasjon (maks) :
1.09W (Ta), 1.66W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
SOT-23-3 (TO-236)
Pakke / sak :
TO-236-3, SC-59, SOT-23-3
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