Vishay Semiconductor Diodes Division - GBUE2560-M3/P

KEY Part #: K6542570

GBUE2560-M3/P Priser (USD) [24228stk Lager]

  • 1 pcs$1.70110

Delnummer:
GBUE2560-M3/P
Produsent:
Vishay Semiconductor Diodes Division
Detaljert beskrivelse:
BRIDGE RECT 1PHASE 600V 4.9A GBU. Bridge Rectifiers 600V Vrrm; 25A If Case Style GBU
Manufacturer's standard lead time:
På lager
Holdbarhet:
Ett år
Brikke fra:
Hong Kong
RoHS:
Betalingsmetode:
Forsendelsesmåte:
Familiekategorier:
KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Power Driver-moduler, Transistorer - Bipolar (BJT) - Singel, Dioder - Variabel kapasitet (Varicaps, Varactors), Tyristorer - DIAC, SIDAC, Transistorer - FET, MOSFET - En, Transistorer - JFET-er, Tyristorer - TRIAC and Transistorer - FET, MOSFET - Arrays ...
Konkurransefordel:
We specialize in Vishay Semiconductor Diodes Division GBUE2560-M3/P electronic components. GBUE2560-M3/P can be shipped within 24 hours after order. If you have any demands for GBUE2560-M3/P, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

GBUE2560-M3/P Produktegenskaper

Delnummer : GBUE2560-M3/P
Produsent : Vishay Semiconductor Diodes Division
Beskrivelse : BRIDGE RECT 1PHASE 600V 4.9A GBU
Serie : -
Delstatus : Active
Diodetype : Single Phase
Teknologi : Standard
Spenning - Peak Reverse (Max) : 600V
Nåværende - Gjennomsnittlig rettet (Io) : 4.9A
Spenning - Fremover (Vf) (Maks) @ Hvis : 920mV @ 12.5A
Nåværende - Omvendt lekkasje @ Vr : 10µA @ 600V
Driftstemperatur : -55°C ~ 175°C (TJ)
Monteringstype : Through Hole
Pakke / sak : 4-SIP, GBU
Leverandørenhetspakke : GBU

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