FCU2250N80Z Priser (USD) [142124stk Lager]
- 1 pcs$0.26025
- 1,800 pcs$0.22396
- Delnummer:
- FCU2250N80Z
- Produsent:
- ON Semiconductor
- Detaljert beskrivelse:
- MOSFET N-CH 800V 2.6A IPAK.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - FET, MOSFET - RF, Tyristorer - SCR-er - moduler, Transistorer - Bipolar (BJT) - Enkelt, forhåndsfor, Transistorer - Bipolar (BJT) - Arrays, pre-partisk, Transistorer - IGBT-er - Arrays, Transistorer - JFET-er, Transistorer - Bipolar (BJT) - RF and Tyristorer - DIAC, SIDAC ...
- Konkurransefordel:
- We specialize in ON Semiconductor FCU2250N80Z electronic components. FCU2250N80Z can be shipped within 24 hours after order. If you have any demands for FCU2250N80Z, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FCU2250N80Z Produktegenskaper
Delnummer :
FCU2250N80Z
Produsent :
ON Semiconductor
Beskrivelse :
MOSFET N-CH 800V 2.6A IPAK
Serie :
SuperFET® II
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
800V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
2.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
2.25 Ohm @ 1.3A, 10V
Vgs (th) (Max) @ Id :
4.5V @ 260µA
Gate Lading (Qg) (Max) @ Vgs :
14nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
585pF @ 100V
FET-funksjon :
-
Effektdissipasjon (maks) :
39W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
I-PAK
Pakke / sak :
TO-251-3 Short Leads, IPak, TO-251AA
Siste nytt
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