IXFN27N80Q Priser (USD) [3139stk Lager]
- 1 pcs$14.56169
- 10 pcs$14.48924
- Delnummer:
- IXFN27N80Q
- Produsent:
- IXYS
- Detaljert beskrivelse:
- MOSFET N-CH 800V 27A SOT-227B.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - IGBT-er - Arrays, Tyristorer - TRIAC, Transistorer - FET, MOSFET - RF, Power Driver-moduler, Transistorer - FET, MOSFET - En, Transistorer - FET, MOSFET - Arrays, Transistorer - Bipolar (BJT) - Singel and Transistorer - IGBT-er - moduler ...
- Konkurransefordel:
- We specialize in IXYS IXFN27N80Q electronic components. IXFN27N80Q can be shipped within 24 hours after order. If you have any demands for IXFN27N80Q, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFN27N80Q Produktegenskaper
Delnummer :
IXFN27N80Q
Produsent :
IXYS
Beskrivelse :
MOSFET N-CH 800V 27A SOT-227B
Serie :
HiPerFET™
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
800V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
27A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
320 mOhm @ 500mA, 10V
Vgs (th) (Max) @ Id :
4.5V @ 4mA
Gate Lading (Qg) (Max) @ Vgs :
170nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
7600pF @ 25V
FET-funksjon :
-
Effektdissipasjon (maks) :
520W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Chassis Mount
Leverandørenhetspakke :
SOT-227B
Pakke / sak :
SOT-227-4, miniBLOC
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