Beskrivelse :
GANFET 3 N-CH 100V 9BGA
FET Type :
3 N-Channel (Half Bridge + Synchronous Bootstrap)
FET-funksjon :
GaNFET (Gallium Nitride)
Drenering til kildespenning (Vdss) :
100V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
1.7A, 500mA
Rds On (Max) @ Id, vgs :
320 mOhm @ 2A, 5V, 3.3 Ohm @ 2A, 5V
Vgs (th) (Max) @ Id :
2.5V @ 100µA, 2.5V @ 20µA
Gate Lading (Qg) (Max) @ Vgs :
0.16nC @ 5V, 0.044nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds :
16pF @ 50V, 7pF @ 50V
Driftstemperatur :
-40°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
9-BGA (1.35x1.35)