[1601stk Lager]
- Delnummer:
- TPC6009-H(TE85L,FM
- Produsent:
- Toshiba Semiconductor and Storage
- Detaljert beskrivelse:
- MOSFET N-CH 40V 5.3A VS6.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - Bipolar (BJT) - Enkelt, forhåndsfor, Transistorer - Bipolar (BJT) - Arrays, pre-partisk, Transistorer - JFET-er, Transistorer - Bipolar (BJT) - Singel, Transistorer - IGBT-er - moduler, Transistorer - FET, MOSFET - RF, Dioder - Zener - Singel and Dioder - RF ...
- Konkurransefordel:
- We specialize in Toshiba Semiconductor and Storage TPC6009-H(TE85L,FM electronic components. TPC6009-H(TE85L,FM can be shipped within 24 hours after order. If you have any demands for TPC6009-H(TE85L,FM, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TPC6009-H(TE85L,FM Produktegenskaper
Delnummer :
TPC6009-H(TE85L,FM
Produsent :
Toshiba Semiconductor and Storage
Beskrivelse :
MOSFET N-CH 40V 5.3A VS6
Serie :
U-MOSVI-H
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
40V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
5.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, vgs :
81 mOhm @ 2.7A, 10V
Vgs (th) (Max) @ Id :
2.3V @ 100µA
Gate Lading (Qg) (Max) @ Vgs :
4.7nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
290pF @ 10V
FET-funksjon :
-
Effektdissipasjon (maks) :
700mW (Ta)
Driftstemperatur :
150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
VS-6 (2.9x2.8)
Pakke / sak :
SOT-23-6 Thin, TSOT-23-6
Siste nytt
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