TK14G65W5,RQ Priser (USD) [67891stk Lager]
- 1 pcs$0.57593
- 1,000 pcs$0.49615
- Delnummer:
- TK14G65W5,RQ
- Produsent:
- Toshiba Semiconductor and Storage
- Detaljert beskrivelse:
- MOSFET N-CH 650V 13.7A DPAK.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - Bipolar (BJT) - RF, Tyristorer - DIAC, SIDAC, Transistorer - spesialformål, Dioder - Zener - Arrays, Transistorer - IGBT-er - Arrays, Transistorer - Bipolar (BJT) - Enkelt, forhåndsfor, Transistorer - IGBT-er - singel and Power Driver-moduler ...
- Konkurransefordel:
- We specialize in Toshiba Semiconductor and Storage TK14G65W5,RQ electronic components. TK14G65W5,RQ can be shipped within 24 hours after order. If you have any demands for TK14G65W5,RQ, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK14G65W5,RQ Produktegenskaper
Delnummer :
TK14G65W5,RQ
Produsent :
Toshiba Semiconductor and Storage
Beskrivelse :
MOSFET N-CH 650V 13.7A DPAK
Serie :
DTMOSIV
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
650V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
13.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
300 mOhm @ 6.9A, 10V
Vgs (th) (Max) @ Id :
4.5V @ 690µA
Gate Lading (Qg) (Max) @ Vgs :
40nC @ 10V
Vgs (maks) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
1300pF @ 300V
FET-funksjon :
-
Effektdissipasjon (maks) :
130W (Tc)
Driftstemperatur :
150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
D2PAK
Pakke / sak :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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