IPS65R1K0CEAKMA1 Priser (USD) [272498stk Lager]
- 1 pcs$0.13574
- 1,500 pcs$0.12460
- Delnummer:
- IPS65R1K0CEAKMA1
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET N-CH 650V 4.3A TO-251-3.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - RF, Transistorer - IGBT-er - moduler, Dioder - Zener - Arrays, Transistorer - Bipolar (BJT) - RF, Dioder - Variabel kapasitet (Varicaps, Varactors), Dioder - Zener - Singel, Dioder - likerettere - singel and Dioder - likerettere - matriser ...
- Konkurransefordel:
- We specialize in Infineon Technologies IPS65R1K0CEAKMA1 electronic components. IPS65R1K0CEAKMA1 can be shipped within 24 hours after order. If you have any demands for IPS65R1K0CEAKMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPS65R1K0CEAKMA1 Produktegenskaper
Delnummer :
IPS65R1K0CEAKMA1
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET N-CH 650V 4.3A TO-251-3
Serie :
CoolMOS™ CE
Delstatus :
Not For New Designs
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
650V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
4.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
1 Ohm @ 1.5A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 200µA
Gate Lading (Qg) (Max) @ Vgs :
15.3nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
328pF @ 100V
FET-funksjon :
-
Effektdissipasjon (maks) :
37W (Tc)
Driftstemperatur :
-40°C ~ 150°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
TO-251
Pakke / sak :
TO-251-3 Stub Leads, IPak
Siste nytt
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