IPB70N10SL16ATMA1 Priser (USD) [61718stk Lager]
- 1 pcs$0.63353
- 1,000 pcs$0.60332
- Delnummer:
- IPB70N10SL16ATMA1
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET N-CH 100V 70A TO263-3.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - IGBT-er - singel, Transistorer - IGBT-er - Arrays, Dioder - RF, Tyristorer - SCR, Dioder - Bridge likerettere, Tyristorer - SCR-er - moduler, Tyristorer - TRIAC and Transistorer - FET, MOSFET - En ...
- Konkurransefordel:
- We specialize in Infineon Technologies IPB70N10SL16ATMA1 electronic components. IPB70N10SL16ATMA1 can be shipped within 24 hours after order. If you have any demands for IPB70N10SL16ATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPB70N10SL16ATMA1 Produktegenskaper
Delnummer :
IPB70N10SL16ATMA1
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET N-CH 100V 70A TO263-3
Serie :
SIPMOS®
Delstatus :
Not For New Designs
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
100V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
70A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, vgs :
16 mOhm @ 50A, 10V
Vgs (th) (Max) @ Id :
2V @ 2mA
Gate Lading (Qg) (Max) @ Vgs :
240nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
4540pF @ 25V
FET-funksjon :
-
Effektdissipasjon (maks) :
250W (Tc)
Driftstemperatur :
-55°C ~ 175°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
PG-TO263-3-2
Pakke / sak :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Siste nytt
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