IRFB4227PBF Priser (USD) [26568stk Lager]
- 1 pcs$1.30006
- 10 pcs$1.17270
- 100 pcs$0.89407
- 500 pcs$0.69538
- 1,000 pcs$0.57618
- Delnummer:
- IRFB4227PBF
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET N-CH 200V 65A TO-220AB.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - FET, MOSFET - En, Transistorer - IGBT-er - moduler, Dioder - Zener - Arrays, Tyristorer - TRIAC, Tyristorer - DIAC, SIDAC, Transistorer - spesialformål, Transistorer - IGBT-er - Arrays and Transistorer - IGBT-er - singel ...
- Konkurransefordel:
- We specialize in Infineon Technologies IRFB4227PBF electronic components. IRFB4227PBF can be shipped within 24 hours after order. If you have any demands for IRFB4227PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFB4227PBF Produktegenskaper
Delnummer :
IRFB4227PBF
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET N-CH 200V 65A TO-220AB
Serie :
HEXFET®
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
200V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
65A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
24 mOhm @ 46A, 10V
Vgs (th) (Max) @ Id :
5V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
98nC @ 10V
Vgs (maks) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
4600pF @ 25V
FET-funksjon :
-
Effektdissipasjon (maks) :
330W (Tc)
Driftstemperatur :
-40°C ~ 175°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
TO-220AB
Pakke / sak :
TO-220-3
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