SIHH24N65EF-T1-GE3 Priser (USD) [21082stk Lager]
- 1 pcs$1.96466
- 3,000 pcs$1.95488
- Delnummer:
- SIHH24N65EF-T1-GE3
- Produsent:
- Vishay Siliconix
- Detaljert beskrivelse:
- MOSFET N-CHAN 650V 23A POWERPAK.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Tyristorer - DIAC, SIDAC, Transistorer - JFET-er, Tyristorer - SCR, Transistorer - Bipolar (BJT) - Singel, Dioder - likerettere - singel, Transistorer - FET, MOSFET - En, Transistorer - spesialformål and Dioder - RF ...
- Konkurransefordel:
- We specialize in Vishay Siliconix SIHH24N65EF-T1-GE3 electronic components. SIHH24N65EF-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIHH24N65EF-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIHH24N65EF-T1-GE3 Produktegenskaper
Delnummer :
SIHH24N65EF-T1-GE3
Produsent :
Vishay Siliconix
Beskrivelse :
MOSFET N-CHAN 650V 23A POWERPAK
Serie :
-
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
650V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
23A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
158 mOhm @ 12A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
17nC @ 10V
Vgs (maks) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
2780pF @ 100V
FET-funksjon :
-
Effektdissipasjon (maks) :
202W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
PowerPAK® 8 x 8
Pakke / sak :
8-PowerTDFN
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