SSM6J212FE,LF Priser (USD) [603363stk Lager]
- 1 pcs$0.06777
- 4,000 pcs$0.06743
- Delnummer:
- SSM6J212FE,LF
- Produsent:
- Toshiba Semiconductor and Storage
- Detaljert beskrivelse:
- MOSFET P-CH 20V 4A ES6.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - FET, MOSFET - Arrays, Transistorer - FET, MOSFET - RF, Power Driver-moduler, Transistorer - IGBT-er - singel, Transistorer - Bipolar (BJT) - RF, Tyristorer - TRIAC, Tyristorer - SCR-er - moduler and Transistorer - JFET-er ...
- Konkurransefordel:
- We specialize in Toshiba Semiconductor and Storage SSM6J212FE,LF electronic components. SSM6J212FE,LF can be shipped within 24 hours after order. If you have any demands for SSM6J212FE,LF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SSM6J212FE,LF Produktegenskaper
Delnummer :
SSM6J212FE,LF
Produsent :
Toshiba Semiconductor and Storage
Beskrivelse :
MOSFET P-CH 20V 4A ES6
Serie :
U-MOSVI
Delstatus :
Active
FET Type :
P-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
20V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
1.5V, 4.5V
Rds On (Max) @ Id, vgs :
40.7 mOhm @ 3A, 4.5V
Vgs (th) (Max) @ Id :
1V @ 1mA
Gate Lading (Qg) (Max) @ Vgs :
14.1nC @ 4.5V
Vgs (maks) :
±8V
Input Capacitance (Ciss) (Max) @ Vds :
970pF @ 10V
FET-funksjon :
-
Effektdissipasjon (maks) :
500mW (Ta)
Driftstemperatur :
150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
ES6
Pakke / sak :
SOT-563, SOT-666
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