N0602N-S19-AY Priser (USD) [106032stk Lager]
- 1 pcs$0.89891
- Delnummer:
- N0602N-S19-AY
- Produsent:
- Renesas Electronics America
- Detaljert beskrivelse:
- MOSFET N-CH 60V 100A TO-220.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - IGBT-er - singel, Transistorer - Bipolar (BJT) - Arrays, pre-partisk, Transistorer - FET, MOSFET - Arrays, Dioder - Bridge likerettere, Transistorer - IGBT-er - moduler, Transistorer - JFET-er, Transistorer - Bipolar (BJT) - Singel and Dioder - Variabel kapasitet (Varicaps, Varactors) ...
- Konkurransefordel:
- We specialize in Renesas Electronics America N0602N-S19-AY electronic components. N0602N-S19-AY can be shipped within 24 hours after order. If you have any demands for N0602N-S19-AY, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
N0602N-S19-AY Produktegenskaper
Delnummer :
N0602N-S19-AY
Produsent :
Renesas Electronics America
Beskrivelse :
MOSFET N-CH 60V 100A TO-220
Serie :
-
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
60V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
100A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
4.6 mOhm @ 50A, 10V
Vgs (th) (Max) @ Id :
-
Gate Lading (Qg) (Max) @ Vgs :
133nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
7730pF @ 25V
FET-funksjon :
-
Effektdissipasjon (maks) :
1.5W (Ta), 156W (Tc)
Driftstemperatur :
150°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
TO-220-3
Pakke / sak :
TO-220-3 Isolated Tab
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