IRLHS6342TRPBF Priser (USD) [394804stk Lager]
- 1 pcs$0.09369
- 4,000 pcs$0.08092
- Delnummer:
- IRLHS6342TRPBF
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET N-CH 30V 8.7A PQFN.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - Zener - Singel, Tyristorer - DIAC, SIDAC, Transistorer - spesialformål, Power Driver-moduler, Transistorer - programmerbar enhet, Transistorer - IGBT-er - moduler, Dioder - Variabel kapasitet (Varicaps, Varactors) and Transistorer - IGBT-er - Arrays ...
- Konkurransefordel:
- We specialize in Infineon Technologies IRLHS6342TRPBF electronic components. IRLHS6342TRPBF can be shipped within 24 hours after order. If you have any demands for IRLHS6342TRPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRLHS6342TRPBF Produktegenskaper
Delnummer :
IRLHS6342TRPBF
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET N-CH 30V 8.7A PQFN
Serie :
HEXFET®
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
30V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
8.7A (Ta), 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
2.5V, 4.5V
Rds On (Max) @ Id, vgs :
15.5 mOhm @ 8.5A, 4.5V
Vgs (th) (Max) @ Id :
1.1V @ 10µA
Gate Lading (Qg) (Max) @ Vgs :
11nC @ 4.5V
Vgs (maks) :
±12V
Input Capacitance (Ciss) (Max) @ Vds :
1019pF @ 25V
FET-funksjon :
-
Effektdissipasjon (maks) :
2.1W (Ta)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
6-PQFN (2x2)
Pakke / sak :
6-PowerVDFN
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