IPI80N06S207AKSA2 Priser (USD) [78713stk Lager]
- 1 pcs$0.49675
- 500 pcs$0.47309
- Delnummer:
- IPI80N06S207AKSA2
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET N-CH 55V 80A TO262-3.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - FET, MOSFET - En, Transistorer - Bipolar (BJT) - RF, Power Driver-moduler, Tyristorer - SCR-er - moduler, Dioder - likerettere - matriser, Dioder - Variabel kapasitet (Varicaps, Varactors), Dioder - Bridge likerettere and Transistorer - spesialformål ...
- Konkurransefordel:
- We specialize in Infineon Technologies IPI80N06S207AKSA2 electronic components. IPI80N06S207AKSA2 can be shipped within 24 hours after order. If you have any demands for IPI80N06S207AKSA2, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPI80N06S207AKSA2 Produktegenskaper
Delnummer :
IPI80N06S207AKSA2
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET N-CH 55V 80A TO262-3
Serie :
OptiMOS™
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
55V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
6.6 mOhm @ 68A, 10V
Vgs (th) (Max) @ Id :
4V @ 180µA
Gate Lading (Qg) (Max) @ Vgs :
110nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
3400pF @ 25V
FET-funksjon :
-
Effektdissipasjon (maks) :
250W (Tc)
Driftstemperatur :
-55°C ~ 175°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
PG-TO262-3-1
Pakke / sak :
TO-262-3 Long Leads, I²Pak, TO-262AA
Siste nytt
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