TRS8E65C,S1Q Priser (USD) [12497stk Lager]
- 1 pcs$4.22191
- Delnummer:
- TRS8E65C,S1Q
- Produsent:
- Toshiba Semiconductor and Storage
- Detaljert beskrivelse:
- DIODE SCHOTTKY 650V 8A TO220-2L.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - FET, MOSFET - Arrays, Transistorer - Bipolar (BJT) - Singel, Transistorer - Bipolar (BJT) - RF, Transistorer - IGBT-er - moduler, Transistorer - Bipolar (BJT) - Arrays, pre-partisk, Transistorer - FET, MOSFET - En, Dioder - Zener - Arrays and Transistorer - IGBT-er - singel ...
- Konkurransefordel:
- We specialize in Toshiba Semiconductor and Storage TRS8E65C,S1Q electronic components. TRS8E65C,S1Q can be shipped within 24 hours after order. If you have any demands for TRS8E65C,S1Q, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TRS8E65C,S1Q Produktegenskaper
Delnummer :
TRS8E65C,S1Q
Produsent :
Toshiba Semiconductor and Storage
Beskrivelse :
DIODE SCHOTTKY 650V 8A TO220-2L
Serie :
-
Delstatus :
Active
Diodetype :
Silicon Carbide Schottky
Spenning - DC Reverse (Vr) (Max) :
650V
Nåværende - Gjennomsnittlig rettet (Io) :
8A (DC)
Spenning - Fremover (Vf) (Maks) @ Hvis :
1.7V @ 8A
Hastighet :
No Recovery Time > 500mA (Io)
Omvendt gjenopprettingstid (trr) :
0ns
Nåværende - Omvendt lekkasje @ Vr :
90µA @ 650V
Capacitance @ Vr, F :
44pF @ 650V, 1MHz
Monteringstype :
Through Hole
Pakke / sak :
TO-220-2
Leverandørenhetspakke :
TO-220-2L
Driftstemperatur - veikryss :
175°C (Max)
Siste nytt
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