TSM60N600CH C5G Priser (USD) [55666stk Lager]
- 1 pcs$0.70241
- Delnummer:
- TSM60N600CH C5G
- Produsent:
- Taiwan Semiconductor Corporation
- Detaljert beskrivelse:
- MOSFET N-CHANNEL 600V 8A TO251.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - FET, MOSFET - RF, Transistorer - spesialformål, Transistorer - Bipolar (BJT) - Arrays, pre-partisk, Transistorer - Bipolar (BJT) - Singel, Dioder - Zener - Singel, Dioder - likerettere - matriser, Power Driver-moduler and Dioder - Zener - Arrays ...
- Konkurransefordel:
- We specialize in Taiwan Semiconductor Corporation TSM60N600CH C5G electronic components. TSM60N600CH C5G can be shipped within 24 hours after order. If you have any demands for TSM60N600CH C5G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TSM60N600CH C5G Produktegenskaper
Delnummer :
TSM60N600CH C5G
Produsent :
Taiwan Semiconductor Corporation
Beskrivelse :
MOSFET N-CHANNEL 600V 8A TO251
Serie :
-
Delstatus :
Not For New Designs
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
600V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
600 mOhm @ 4A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
13nC @ 10V
Vgs (maks) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
743pF @ 100V
FET-funksjon :
-
Effektdissipasjon (maks) :
83W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
TO-251 (IPAK)
Pakke / sak :
TO-251-3 Short Leads, IPak, TO-251AA
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