Vishay Semiconductor Diodes Division - VS-GB90SA120U

KEY Part #: K6532812

VS-GB90SA120U Priser (USD) [1411stk Lager]

  • 1 pcs$35.84552
  • 10 pcs$34.05116
  • 25 pcs$33.15505
  • 100 pcs$30.69080

Delnummer:
VS-GB90SA120U
Produsent:
Vishay Semiconductor Diodes Division
Detaljert beskrivelse:
TRANSISTOR INSLTED GATE BIPOLAR.
Manufacturer's standard lead time:
På lager
Holdbarhet:
Ett år
Brikke fra:
Hong Kong
RoHS:
Betalingsmetode:
Forsendelsesmåte:
Familiekategorier:
KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - IGBT-er - singel, Transistorer - Bipolar (BJT) - Arrays, pre-partisk, Transistorer - Bipolar (BJT) - Singel, Transistorer - Bipolar (BJT) - Arrays, Dioder - likerettere - matriser, Transistorer - IGBT-er - Arrays, Tyristorer - SCR-er - moduler and Transistorer - JFET-er ...
Konkurransefordel:
We specialize in Vishay Semiconductor Diodes Division VS-GB90SA120U electronic components. VS-GB90SA120U can be shipped within 24 hours after order. If you have any demands for VS-GB90SA120U, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VS-GB90SA120U Produktegenskaper

Delnummer : VS-GB90SA120U
Produsent : Vishay Semiconductor Diodes Division
Beskrivelse : TRANSISTOR INSLTED GATE BIPOLAR
Serie : -
Delstatus : Active
IGBT-type : NPT
konfigurasjon : Single
Spenning - Samlebrenningens nedbrytning (maks) : 1200V
Nåværende - Samler (Ic) (Maks) : 149A
Kraft - Maks : 862W
Vce (på) (Max) @ Vge, Ic : 3.9V @ 15V, 75A
Nåværende - Collector Cutoff (Max) : 250µA
Input Capacitance (Cies) @ Vce : -
Input : Standard
NTC Thermistor : No
Driftstemperatur : -40°C ~ 150°C (TJ)
Monteringstype : Chassis Mount
Pakke / sak : SOT-227-4
Leverandørenhetspakke : SOT-227

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