SIHP8N50D-E3 Priser (USD) [113540stk Lager]
- 1 pcs$0.80275
- 10 pcs$0.71161
- 100 pcs$0.56247
- 500 pcs$0.43621
- 1,000 pcs$0.32577
- Delnummer:
- SIHP8N50D-E3
- Produsent:
- Vishay Siliconix
- Detaljert beskrivelse:
- MOSFET N-CH 500V 8.7A TO220AB.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - Bipolar (BJT) - RF, Dioder - Variabel kapasitet (Varicaps, Varactors), Tyristorer - SCR, Dioder - Zener - Arrays, Transistorer - IGBT-er - Arrays, Tyristorer - TRIAC, Transistorer - IGBT-er - singel and Dioder - Zener - Singel ...
- Konkurransefordel:
- We specialize in Vishay Siliconix SIHP8N50D-E3 electronic components. SIHP8N50D-E3 can be shipped within 24 hours after order. If you have any demands for SIHP8N50D-E3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIHP8N50D-E3 Produktegenskaper
Delnummer :
SIHP8N50D-E3
Produsent :
Vishay Siliconix
Beskrivelse :
MOSFET N-CH 500V 8.7A TO220AB
Serie :
-
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
500V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
8.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
850 mOhm @ 4A, 10V
Vgs (th) (Max) @ Id :
5V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
30nC @ 10V
Vgs (maks) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
527pF @ 100V
FET-funksjon :
-
Effektdissipasjon (maks) :
156W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
TO-220AB
Pakke / sak :
TO-220-3
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