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- Delnummer:
- FQNL1N50BBU
- Produsent:
- ON Semiconductor
- Detaljert beskrivelse:
- MOSFET N-CH 500V 0.27A TO-92L.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - Bridge likerettere, Transistorer - IGBT-er - singel, Transistorer - FET, MOSFET - Arrays, Transistorer - Bipolar (BJT) - Singel, Tyristorer - SCR-er - moduler, Transistorer - Bipolar (BJT) - Enkelt, forhåndsfor, Power Driver-moduler and Transistorer - spesialformål ...
- Konkurransefordel:
- We specialize in ON Semiconductor FQNL1N50BBU electronic components. FQNL1N50BBU can be shipped within 24 hours after order. If you have any demands for FQNL1N50BBU, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FQNL1N50BBU Produktegenskaper
Delnummer :
FQNL1N50BBU
Produsent :
ON Semiconductor
Beskrivelse :
MOSFET N-CH 500V 0.27A TO-92L
Serie :
QFET®
Delstatus :
Obsolete
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
500V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
270mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
9 Ohm @ 135mA, 10V
Vgs (th) (Max) @ Id :
3.7V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
5.5nC @ 10V
Vgs (maks) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
150pF @ 25V
FET-funksjon :
-
Effektdissipasjon (maks) :
1.5W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
TO-92-3
Pakke / sak :
TO-226-3, TO-92-3 Long Body (Formed Leads)
Siste nytt
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