STH110N8F7-2 Priser (USD) [126780stk Lager]
- 1 pcs$0.29174
- Delnummer:
- STH110N8F7-2
- Produsent:
- STMicroelectronics
- Detaljert beskrivelse:
- MOSFET.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - Bipolar (BJT) - RF, Dioder - likerettere - singel, Transistorer - Bipolar (BJT) - Arrays, pre-partisk, Tyristorer - TRIAC, Dioder - Variabel kapasitet (Varicaps, Varactors), Power Driver-moduler, Tyristorer - SCR and Transistorer - IGBT-er - moduler ...
- Konkurransefordel:
- We specialize in STMicroelectronics STH110N8F7-2 electronic components. STH110N8F7-2 can be shipped within 24 hours after order. If you have any demands for STH110N8F7-2, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STH110N8F7-2 Produktegenskaper
Delnummer :
STH110N8F7-2
Produsent :
STMicroelectronics
Beskrivelse :
MOSFET
Serie :
STripFET™ F7
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
80V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
110A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
6.6 mOhm @ 55A, 10V
Vgs (th) (Max) @ Id :
4.5V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
45nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
3200pF @ 25V
FET-funksjon :
-
Effektdissipasjon (maks) :
170W (Tc)
Driftstemperatur :
-55°C ~ 175°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
H2Pak-2
Pakke / sak :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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