TSM10N80CZ C0G Priser (USD) [27833stk Lager]
- 1 pcs$1.48075
- Delnummer:
- TSM10N80CZ C0G
- Produsent:
- Taiwan Semiconductor Corporation
- Detaljert beskrivelse:
- MOSFET N-CH 800V 9.5A TO220.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - likerettere - matriser, Dioder - likerettere - singel, Transistorer - JFET-er, Power Driver-moduler, Transistorer - Bipolar (BJT) - Arrays, Tyristorer - DIAC, SIDAC, Transistorer - IGBT-er - singel and Transistorer - FET, MOSFET - RF ...
- Konkurransefordel:
- We specialize in Taiwan Semiconductor Corporation TSM10N80CZ C0G electronic components. TSM10N80CZ C0G can be shipped within 24 hours after order. If you have any demands for TSM10N80CZ C0G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TSM10N80CZ C0G Produktegenskaper
Delnummer :
TSM10N80CZ C0G
Produsent :
Taiwan Semiconductor Corporation
Beskrivelse :
MOSFET N-CH 800V 9.5A TO220
Serie :
-
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
800V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
9.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
1.05 Ohm @ 4.75A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
53nC @ 10V
Vgs (maks) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
2336pF @ 25V
FET-funksjon :
-
Effektdissipasjon (maks) :
48W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
TO-220
Pakke / sak :
TO-220-3
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