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Samsung Semiconductor - K4B2G0846F-BYNB

KEY Part #: K7359656

[20824stk Lager]

    Delnummer:
    K4B2G0846F-BYNB
    Produsent:
    Samsung Semiconductor
    Detaljert beskrivelse:
    2 Gb 256M x 8 2133 Mbps 1.35 V 0 ~ 85 °C 78FBGA Mass Production.
    Manufacturer's standard lead time:
    På lager
    Holdbarhet:
    Ett år
    Brikke fra:
    Hong Kong
    RoHS:
    Betalingsmetode:
    Forsendelsesmåte:
    Familiekategorier:
    KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: SLC Nand, LPDDR4X, DDR4, GDDR6, HBM Flarebolt, MODULE, DDR3 and LPDDR4 ...
    Konkurransefordel:
    We specialize in Samsung Semiconductor K4B2G0846F-BYNB electronic components. K4B2G0846F-BYNB can be shipped within 24 hours after order. If you have any demands for K4B2G0846F-BYNB, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4B2G0846F-BYNB Produktegenskaper

    Delnummer : K4B2G0846F-BYNB
    Produsent : Samsung Semiconductor
    Beskrivelse : 2 Gb 256M x 8 2133 Mbps 1.35 V 0 ~ 85 °C 78FBGA Mass Production
    Serie : DDR3
    tetthet : 2 Gb
    Org. : 256M x 8
    Hastighet : 2133 Mbps
    Spenning : 1.35 V
    Temp. : 0 ~ 85 °C
    Pakke : 78FBGA
    Product Status : Mass Production

    Siste nytt

    Samsung Announces Production of Industry’s First 2GB LPDDR3 Mobile Memory, Using 30nm-class Technology
    Speed for the next generation of mobile devices
    Samsung Now Mass Producing Industry’s First, 20-Nanometer 6Gb LPDDR3 Mobile DRAM
    Samsung Now Producing Four Gigabit LPDDR3 Mobile DRAM, Using 20nm-class Process Technology
    Samsung Electronics Begins Mass Production of Industry's First 12GB LPDDR4X-based uMCP
    Exploring the Key Samsung Technologies That Enabled 10nm-Class DRAM
    [Video] The Future of Autonomous Driving: Samsung’s Memory Component Solutions
    Samsung Electronics Takes 3D Memory to New Heights with Sixth-generation V-NAND SSDs for Client Computing
    [Video] 5G memory solutions : 5G. All in the Memory.
    Samsung’s Newest ISOCELL Image Sensor Enables Mobile Devices to ‘Slow Down’ Time
    NF1 SSD, Reach New Heights with Hyper-Scalable Datacenters
    Samsung Now Mass Producing Industry’s Most Advanced 4Gb DDR3, Using 20 Nanometer Process Technology
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