Vishay Semiconductor Diodes Division - NS8JTHE3_A/P

KEY Part #: K6442310

NS8JTHE3_A/P Priser (USD) [3177stk Lager]

  • 1,000 pcs$0.26162

Delnummer:
NS8JTHE3_A/P
Produsent:
Vishay Semiconductor Diodes Division
Detaljert beskrivelse:
DIODE GEN PURP 600V 8A TO220AC.
Manufacturer's standard lead time:
På lager
Holdbarhet:
Ett år
Brikke fra:
Hong Kong
RoHS:
Betalingsmetode:
Forsendelsesmåte:
Familiekategorier:
KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - Variabel kapasitet (Varicaps, Varactors), Tyristorer - SCR-er - moduler, Transistorer - Bipolar (BJT) - Enkelt, forhåndsfor, Tyristorer - TRIAC, Transistorer - Bipolar (BJT) - Arrays, Transistorer - programmerbar enhet, Dioder - Zener - Arrays and Dioder - likerettere - matriser ...
Konkurransefordel:
We specialize in Vishay Semiconductor Diodes Division NS8JTHE3_A/P electronic components. NS8JTHE3_A/P can be shipped within 24 hours after order. If you have any demands for NS8JTHE3_A/P, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NS8JTHE3_A/P Produktegenskaper

Delnummer : NS8JTHE3_A/P
Produsent : Vishay Semiconductor Diodes Division
Beskrivelse : DIODE GEN PURP 600V 8A TO220AC
Serie : Automotive, AEC-Q101
Delstatus : Obsolete
Diodetype : Standard
Spenning - DC Reverse (Vr) (Max) : 600V
Nåværende - Gjennomsnittlig rettet (Io) : 8A
Spenning - Fremover (Vf) (Maks) @ Hvis : 1.1V @ 8A
Hastighet : Standard Recovery >500ns, > 200mA (Io)
Omvendt gjenopprettingstid (trr) : -
Nåværende - Omvendt lekkasje @ Vr : 10µA @ 600V
Capacitance @ Vr, F : 55pF @ 4V, 1MHz
Monteringstype : Through Hole
Pakke / sak : TO-220-2
Leverandørenhetspakke : TO-220AC
Driftstemperatur - veikryss : -55°C ~ 150°C

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