DMN2300UFB-7B Priser (USD) [912492stk Lager]
- 1 pcs$0.04053
- 10,000 pcs$0.03628
- Delnummer:
- DMN2300UFB-7B
- Produsent:
- Diodes Incorporated
- Detaljert beskrivelse:
- MOSFET N-CH 20V 1.32A 3DFN.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - programmerbar enhet, Transistorer - IGBT-er - moduler, Transistorer - Bipolar (BJT) - RF, Transistorer - Bipolar (BJT) - Arrays, pre-partisk, Transistorer - FET, MOSFET - Arrays, Transistorer - FET, MOSFET - En, Transistorer - Bipolar (BJT) - Singel and Dioder - Bridge likerettere ...
- Konkurransefordel:
- We specialize in Diodes Incorporated DMN2300UFB-7B electronic components. DMN2300UFB-7B can be shipped within 24 hours after order. If you have any demands for DMN2300UFB-7B, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMN2300UFB-7B Produktegenskaper
Delnummer :
DMN2300UFB-7B
Produsent :
Diodes Incorporated
Beskrivelse :
MOSFET N-CH 20V 1.32A 3DFN
Serie :
-
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
20V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
1.32A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
1.8V, 4.5V
Rds On (Max) @ Id, vgs :
175 mOhm @ 300mA, 4.5V
Vgs (th) (Max) @ Id :
950mV @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
0.89nC @ 4.5V
Vgs (maks) :
±8V
Input Capacitance (Ciss) (Max) @ Vds :
67.62pF @ 20V
FET-funksjon :
-
Effektdissipasjon (maks) :
468mW (Ta)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
X1-DFN1006-3
Pakke / sak :
3-UFDFN
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