IPP65R190E6XKSA1 Priser (USD) [26720stk Lager]
- 1 pcs$1.41465
- 10 pcs$1.26393
- 100 pcs$0.98316
- 500 pcs$0.79613
- 1,000 pcs$0.67143
- Delnummer:
- IPP65R190E6XKSA1
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET N-CH 650V 20.2A TO220.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - Bipolar (BJT) - Singel, Transistorer - FET, MOSFET - RF, Tyristorer - DIAC, SIDAC, Tyristorer - TRIAC, Power Driver-moduler, Transistorer - FET, MOSFET - Arrays, Dioder - likerettere - matriser and Tyristorer - SCR-er - moduler ...
- Konkurransefordel:
- We specialize in Infineon Technologies IPP65R190E6XKSA1 electronic components. IPP65R190E6XKSA1 can be shipped within 24 hours after order. If you have any demands for IPP65R190E6XKSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPP65R190E6XKSA1 Produktegenskaper
Delnummer :
IPP65R190E6XKSA1
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET N-CH 650V 20.2A TO220
Serie :
CoolMOS™
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
650V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
20.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
190 mOhm @ 7.3A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 730µA
Gate Lading (Qg) (Max) @ Vgs :
73nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1620pF @ 100V
FET-funksjon :
-
Effektdissipasjon (maks) :
151W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
PG-TO220-3
Pakke / sak :
TO-220-3
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