BSS192PH6327XTSA1 Priser (USD) [485547stk Lager]
- 1 pcs$0.07656
- 1,000 pcs$0.07618
- Delnummer:
- BSS192PH6327XTSA1
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET P-CH 250V 190MA SOT89.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - likerettere - singel, Transistorer - Bipolar (BJT) - Arrays, Transistorer - IGBT-er - moduler, Dioder - Bridge likerettere, Transistorer - spesialformål, Transistorer - FET, MOSFET - RF, Transistorer - Bipolar (BJT) - Enkelt, forhåndsfor and Dioder - RF ...
- Konkurransefordel:
- We specialize in Infineon Technologies BSS192PH6327XTSA1 electronic components. BSS192PH6327XTSA1 can be shipped within 24 hours after order. If you have any demands for BSS192PH6327XTSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSS192PH6327XTSA1 Produktegenskaper
Delnummer :
BSS192PH6327XTSA1
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET P-CH 250V 190MA SOT89
Serie :
SIPMOS™
Delstatus :
Active
FET Type :
P-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
250V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
190mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
2.8V, 10V
Rds On (Max) @ Id, vgs :
12 Ohm @ 190mA, 10V
Vgs (th) (Max) @ Id :
2V @ 130µA
Gate Lading (Qg) (Max) @ Vgs :
6.1nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
104pF @ 25V
FET-funksjon :
-
Effektdissipasjon (maks) :
1W (Ta)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
PG-SOT89
Pakke / sak :
TO-243AA
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