Beskrivelse :
GAN TRANS 2N-CH 60V BUMPED DIE
Delstatus :
Discontinued at Digi-Key
FET Type :
2 N-Channel (Half Bridge)
FET-funksjon :
GaNFET (Gallium Nitride)
Drenering til kildespenning (Vdss) :
60V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
9.5A, 38A
Rds On (Max) @ Id, vgs :
11.5 mOhm @ 20A, 5V
Vgs (th) (Max) @ Id :
2.5V @ 2mA
Gate Lading (Qg) (Max) @ Vgs :
2.7nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds :
300pF @ 30V
Driftstemperatur :
-40°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
Die